產品品牌：ISC

產品型號：2SD2525

產品性質：熱銷

功率特性：其它

營銷方式：廠家直銷

結構：其它

極性：PNP型

封裝形式：直插型

封裝材料：塑料封裝

材料：硅

DESCRIPTION                                              ·Collector-Emitter Breakdown Voltage-  : V(BR)CEO= 120V (Min)·Wide Area of Safe Operation·Complement to Type 2SB1086  APPLICATIONS·Designed for low frequency power amplifier applications.   ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VCBO	Collector-Base Voltage	120	V
VCEO	Collector-Emitter Voltage	120	V
VEBO	Emitter-Base Voltage	5.0	V
IC	Collector Current-Continuous	1.5	A
ICM	Collector Current-Peak	3	A
PC	Total Power Dissipation@ TC=25℃	10	W
	Total Power Dissipation@ Ta=25℃	1.2
TJ	Junction Temperature	150
Tstg	Storage Temperature Range	-55~150	℃

 
 isc Silicon NPN Power Transistor                 2SD1563 ELECTRICAL CHARACTERISTICSTC=25℃ unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V(BR)CEO	Collector-Emitter Breakdown Voltage	IC= 1mA; IB= 0	120			V
V(BR)CBO	Collector-Base Breakdown Voltage	IC= 50μA; IE= 0	120			V
V(BR)EBO	Emitter-Base Breakdown Voltage	IE= 50μA; IC= 0	5			V
VCE(sat)	Collector-Emitter Saturation Voltage	IC= 1A; IB= 0.1A			2.0	V
VBE(sat)	Base-Emitter Saturation Voltage	IC= 1A; IB= 0.1A			1.5	V
ICBO	Collector Cutoff Current	VCB= 100V; IE= 0			1.0	μA
IEBO	Emitter Cutoff Current	VEB= 4V; IC= 0			1.0	μA
hFE	DC Current Gain	IC= 0.1A; VCE= 5V	56		390
fT	Current-Gain—Bandwidth Product	IC= 0.1A; VCE= 5V		80		MHz
COB	Output Capacitance	IE= 0; VCB= 10V; ftest= 1MHz		20		pF

 u  hFE Classifications

N	P	Q	R
56-120	82-180	120-270	180-390