產品品牌：ISC

產品型號：2N6121

極性：NPN型

封裝形式：塑料封裝

材料：硅

產品性質：熱銷

集電極允許電流：4A

特征頻率：2.5 MHz

功率特性：其它

營銷方式：廠家直銷

頻率特性：其它

結構：其它

封裝材料：塑料封裝

耗散功率：40 W

DESCRIPTION                                              ·Collector-Emitter Sustaining Voltage-: VCE(sat) = 0.6V(Max.)@ IC= 1.5A·Collector-Emitter Sustaining Voltage-  : VCEO(SUS)= 45V(Min)·Complement to Type 2N6124 APPLICATIONS·Designed for use in power amplifier and switching circuits applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VCBO	Collector-Base Voltage	45	V
VCEO	Collector-Emitter Voltage	45	V
VEBO	Emitter-Base Voltage	5	V
IC	Collector Current-Continuous	4	A
ICM	Collector Current-Peak	8	A
IB	Base Current	1	A
PC	Collector Power Dissipation@ TC=25℃	40	W
TJ	Junction Temperature	150	℃
Tstg	Storage Temperature Range	-65~150	℃

 THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	MAX	UNIT
Rth j-c	Thermal Resistance, Junction to Case	3.125	℃/W

 
 isc Silicon NPN Power Transistor                  2N6121 
 ELECTRICAL CHARACTERISTICSTC=25℃ unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
VCEO(SUS)	Collector-Emitter Sustaining Voltage	IC= 100mA ;IB=0	45		V
VCE(sat)-1	Collector-Emitter Saturation Voltage	IC= 1.5A; IB= 0.15A		0.6	V
VCE(sat)-2	Collector-Emitter Saturation Voltage	IC= 4A; IB= 1.0A		1.4	V
VBE(on)	Base-Emitter On Voltage	IC= 1.5A ; VCE= 2V		1.2	V
ICEX	Collector Cutoff Current	VCE= 45V; VBE(off)= 1.5VVCE= 45V; VBE(off)= 1.5V ;TC= 150℃		0.12.0	mA
ICEO	Collector Cutoff Current	VCE= 45V;IB= 0		1.0	mA
IEBO	Emitter Cutoff Current	VEB= 5V; IC= 0		1.0	mA
hFE-1	DC Current Gain	IC= 1.5A ; VCE= 2V	25	100
hFE-2	DC Current Gain	IC= 4A ; VCE= 2V	10
fT	Current-Gain—Bandwidth Product	IC= 1.0A;VCE= 4V, ftest= 1.0MHz	2.5		MHz