產品品牌：ISC

產品型號：2N4899

產品性質：熱銷

集電極允許電流：-1 A

特征頻率：3 MHz

功率特性：其它

營銷方式：廠家直銷

頻率特性：其它

結構：其它

極性：PNP型

耗散功率：25 W

封裝形式：直插型

封裝材料：金屬封裝

材料：硅

DESCRIPTION                                              ·Collector-Emitter Sustaining Voltage-  : VCEO(SUS)= -60V(Min)·Low Collector Saturatioin Voltage-  : VCE(sat)= -0.6V(Max.)@ IC= -1A·Wide Area of Safe Operation APPLICATIONS·Designed for driver circuits, switching and amplifier applications.   ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VCBO	Collector-Base Voltage	-60	V
VCEO	Collector-Emitter Voltage	-60	V
VEBO	Emitter-Base Voltage	-5	V
IC	Collector Current-Continuous	-1	A
ICM	Collector Current-Peak	-4	A
IB	Base Current-Continuous	-1	A
PC	Collector Power Dissipation@ TC=25℃	25	W
TJ	Junction Temperature	200	℃
Tstg	Storage Temperature Range	-65~200	℃

 THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	MAX	UNIT
Rth j-c	Thermal Resistance,Junction to Case	7.0	℃/W

 

isc Silicon PNP Power Transistor                  2N4899 

 

ELECTRICAL CHARACTERISTICSTC=25℃ unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
VCEO(SUS)	Collector-Emitter Sustaining Voltage	IC= -100mA; IB= 0	-60			V
VCE(sat)	Collector-Emitter Saturation Voltage	IC= -1A; IB= -0.1A			-0.6	V
VBE(sat)	Base-Emitter Saturation Voltage	IC= -1A; IB= -0.1A			-1.3	V
VBE(on)	Base-Emitter On Voltage	IC= -1A ; VCE= -1V			-1.3	V
ICEX	Collector Cutoff Current	VCE=-60V;VBE(off)= 1.5VVCE=-60V;VBE(off)= 1.5V;TC=150℃			-0.1-1.0	mA
ICEO	Collector Cutoff Current	VCE= -30V; IB= 0			-0.5	mA
ICBO	Collector Cutoff Current	VCB= -60V; IE= 0			-0.1	mA
IEBO	Emitter Cutoff Current	VEB= -5V; IC= 0			-1.0	mA
hFE-1	DC Current Gain	IC= -50mA ; VCE= -1V	40
hFE-2	DC Current Gain	IC= -500mA ; VCE= -1V	20		100
hFE-3	DC Current Gain	IC= -1A ; VCE= -1V	10
fT	Current-Gain—Bandwidth Product	IC= -0.25A;VCE= -10V, ftest= 1MHz	3			MHz
COB	Output Capacitance	IE= 0;VCB= -10V; ftest= 100kHz			100	pF