產品品牌：ISC

產品型號：2N6129

極性：NPN型

封裝形式：塑料封裝

材料：硅

集電極允許電流：7 A

特征頻率：2.5 MHz

功率特性：其它

營銷方式：廠家直銷

頻率特性：其它

結構：其它

耗散功率：50 W

封裝材料：塑料封裝

DESCRIPTION·DC Current Gain-: hFE = 20-100@ IC= 2.5A·Collector-Emitter Sustaining Voltage-: VCEO(SUS) = 40V(Min)·Complement to Type 2N6132  APPLICATIONS·Designed for use in general purpose amplifer and switchingapplications   ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VCBO	Collector-Base Voltage	40	V
VCEO	Collector-Emitter Voltage	40	V
VEBO	Emitter-Base Voltage	5	V
IC	Collector Current-Continuous	7	A
IB	Base Current	2	A
PC	Collector Power DissipationTC=25℃	50	W
Tj	Junction Temperature	150	℃
Tstg	Storage Temperature Range	-65~150	℃

isc Silicon NPN Power Transistors                 2N6129 
 ELECTRICAL CHARACTERISTICSTC=25℃ unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
VCEO(SUS)	Collector-Emitter Sustaining Voltage	IC= 100mA; IB= 0	40		V
VCE(sat)	Collector-Emitter Saturation Voltage	IC= 7A; IB= 1.4A		1.4	V
VBE(on)	Base-Emitter On Voltage	IC= 7A; VCE= 4V		3.0	V
ICBO	Collector Cutoff Current	VCB= 40V; IE= 0		0.1	mA
ICEO	Collector Cutoff Current	VCE= 40V; IB= 0		1.0	mA
IEBO	Emitter Cutoff Current	VEB= 5V; IC= 0		1.0	mA
hFE-1	DC Current Gain	IC= 2.5A ; VCE= 4V	20	100
hFE-2	DC Current Gain	IC= 7A ; VCE= 4V	5
fT	Current-Gain—Bandwidth Product	IC= 0.5A ; VCE= 4V	2.5		MHz