RD06HVF1是一個專門MOS FET型晶體管專為VHF RF功率放大器應用

RD06HVF1 is a MOS FET type transistor specifically
designed for VHF RF power amplifiers applications.

FEATURES
High power gain:
Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz

APPLICATION
For output stage of high power amplifiers in
VHF band mobile radio sets.

深圳浩時健電子有限公司是國內三菱射頻電子元器件專業供應商，三菱射頻產品廣泛應用用於移動通信基站、直放站、衛星通信、有線電視、雷達、無線本地環等領域。積極向國內生產和科研單位推薦新產品：日本三菱公司生產的系列射頻功率放大模塊、系列射頻場效應三極管。多年以來已為國內眾多的生產廠傢、科研院所、大專院校、國傢重要單位維修部門的生產、維修、研制開發新品、教學實驗等提供瞭準確、快捷、方便的配套供貨服務。在經營運作上,我公司批發、零售兼營，可向用戶長期保證貨源，並保證供貨品種的技術指標滿足相關的國際檢測標準。

RA60H4452M1、RA60H4047M1、RA60H3847M1、RA60H1317M1A、RA60H1317M、RA55H4452M、RA55H4047M、RA55H3847M、RA55H3340M、RA45H8994M1、RA45H7687M1、RA45H4452M、RA45H4047M、RA45H4045MR、RA35H1516M、RA33H1516M1、RA30H4552M1、RA30H4452M、RA30H4047M1、RA30H4047M、RA30H3340M、RA30H2127M、RA30H1721M、RA30H1317M1、RA30H1317M、RA30H0608M、RA20H8994M、RA20H8087M、RA18H1213G、RA13H8891MA、RA13H8891MB、RA13H4452M、RA13H4047M、RA13H3340M、RA13H1317M、RA08H1317M、RA08N1317M、RA07N4452M、RA07N4047M、RA07N3340M、RA07M4452MSA、RA07M4452M、RA07M4047MSA、RA07M4047M、RA07M3843M、RA07M3340M、RA07M2127M、RA07M1317MSA、RA07M1317M、RA07M0608M、RA07H4452M、RA07H4047M、RA07H3340M、RA07H0608M、RA06H8285M、RA05H9595M、RA05H8693M、RA03M9595M、RA03M8894M、RA03M8087M、RA03M4547MD、RA03M4043MD、RA03M3540MD、RA02M8087MD、RA01L9595M、RA01L8693MA等RA全系列。

本公司長期經營日本MITSUBISHI三菱全系列射頻功率放大模塊，保證全新原裝，正品現貨，最新批號無鉛環保，假一罰十。深圳、香港公司備有大量現貨庫存，可提供樣品，現特價熱賣中。