Philips Semiconductors Product specification
Thyristors BT151 series
GENERAL DEscriptION QUICK REFERENCE DATA
Glass passivated thyristors ina plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
envelope, intended for use in
applications requiring high BT151- 500R 650R 800R
bidirectional blocking voltage VDRM, Repetitive peak off-state 500 650 800 V
capability and high thermal cycling VRRM voltages
performance. Typical applications IT(AV) Average on-state current 7.5 7.5 7.5 A
include motor control, industrial and IT(RMS) RMS on-state current 12 12 12 A
domestic lighting, heating and static ITSM Non-repetitive peak on-state 100 100 100 A
switching. current
PINNING - TO220AB PIN ConFIGURATION SYMBOL
PIN DEscriptION
1 cathode
2 anode
3 gate
tab anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER ConDITIONS MIN. MAX. UNIT
-500R -650R -800R
VDRM, VRRM Repetitive peak off-state - 5001 6501 800 V
voltages
IT(AV) Average on-state current half sine wave; Tmb £ 109 °C - 7.5 A
IT(RMS) RMS on-state current all conduction angles - 12 A
ITSM Non-repetitive peak half sine wave; Tj = 25 °C prior to
on-state current surge
t = 10 ms - 100 A
t = 8.3 ms - 110 A
I2t I2t for fusing t = 10 ms - 50 A2s
dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 50 mA; - 50 A/ms
on-state current after dIG/dt = 50 mA/ms
triggering
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
VRGM Peak reverse gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 °C
Tj Operating junction - 125 °C

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