紅外線接收管，可分別配850、940nm發射管使用，訂單確認後兩周內交貨，訂貨需付50%訂金；
零售不包運費客戶自行提貨或快遞代收貨款。
The 5112B2 is a photodiode in specialmounted black clear plastic package and suitable for the IRED (850nm) type
Features .High photo sensitivity .Low junction capacitance .High cut-off frequency .Fast switching time .Suitable for the IRED 850nm type
|
Notes:
1. Tolerance is+/-0.25mmunless otherwise noted.
2. Protruded resin under flange is 1.0mm max.
3. Lead spacing is measured wher the leads emerge from the package.
Absolute Maximum Ratings@TA=25℃
Parameter | Maximum Rating | Unit |
Power Dissipation | 150 | mW |
Operating Temperature Range | -55℃to+100℃ | |
Storage Temperature Range | -55℃to+100℃ | |
Lead Soldering Temperature | 260℃for 5 seconds | |
Optical-Electrical Characteristics@TA=25℃
Parameter | Test Conditions | Symbol | Min | Typ | Max | Unit |
Reverse Break Down Voltage | IR=0.1mA Ee=0 | V(BR)R | 30 |
|
| V |
Reverse Dark Current | VR=10V Ee=0 | ID |
|
| 30 | nA |
Open Circuit Voltage | λ=850nm Ee=0.1mW/cm2 | VOC |
| 550 |
| mV |
Rise Time | VR=10Vλ=850nm VL=50Ω | Tr |
| 25 |
| nsec |
Fall Time | If |
| 15 |
| ||
Light Current | VR=5Vλ=850nm Ee=0.1mW/cm2 | IL |
| 10 |
| uA |
Total Capacitance | VR=3V f=1mHz Ee=0 | CT |
| 20 |
| pF |
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