無錫固電ISC 供應場效應管IRF740_半導體材料_電子材料、零部件、結構_電子元器件_貨源

DEscri-ptION

·Drain Current –I_D= 10A@ T_C=25℃

·Drain Source Voltage-

: V_DSS= 400V(Min)

·Static Drain-Source On-Resistance

: R_DS(on)= 0.55Ω(Max)

·Fast Switching Speed

APPLICATIONS

·Designed especially for high voltage,high speed applications,

such as off-line switching power supplies , UPS,AC and DC

motor controls,relay and solenoid drivers.

Absolute Maximum Ratings(T_a=25℃)

SYMBOL	ARAMETER	VALUE	UNIT
V_DSS	Drain-Source Voltage (V_GS=0)	400	V
V_GS	Gate-Source Voltage	±20	V
I_D	Drain Current-continuous@ TC=25℃	10	A
P_tot	Total Dissipation@TC=25℃	125	W
T_j	Max. Operating Junction Temperature	150	℃
T_stg	StorageTemperature Range	-65~150	℃

c=25℃)

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
V_(BR)DSS	Drain-Source Breakdown Voltage	V_GS=0; I_D= 0.25mA	400		V
V_GS(TH)	Gate Threshold Voltage	V_DS= V_GS; I_D= 0.25mA	2	4	V
R_DS(ON)	Drain-Source On-stage Resistance	V_GS= 10V; I_D= 5A		0.55	Ω
I_GSS	Gate Source Leakage Current	V_GS=±20V; V_DS= 0		±500	nA
I_DSS	Zero Gate Voltage Drain Current	V_DS= 400V; V_GS= 0		250	uA
V_SD	Diode Forward Voltage	I_F= 10A; V_GS= 0		2.2	V

新手教學

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