DEscri-ptION
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 140V(Min)
·Good Linearity of hFE
·Complement to Type 2SA1695
APPLICATIONS
·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
VCBO | Collector-Base Voltage | 200 | V |
VCEO | Collector-Emitter Voltage | 140 | V |
VEBO | Emitter-Base Voltage | 6 | V |
IC | Collector Current-Continuous | 10 | A |
IB | Base Current-Continuous | 4 | A |
PC | Collector Power Dissipation @ TC=25℃ | 100 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 50mA ; IB= 0 | 140 |
| V | |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 5A; IB= 0.5A |
|
| 0.5 | V |
ICBO | Collector Cutoff Current | VCB= 200V ; IE= 0 |
|
| 10 | μA |
IEBO | Emitter Cutoff Current | VEB= 6V; IC= 0 |
|
| 10 | μA |
hFE | DC Current Gain | IC= 3A ; VCE= 4V | 50 |
| 180 |
|
COB | Output Capacitance | IE= 0 ; VCB= 10V;f= 1.0MHz |
| 250 |
| pF |
fT | Current-Gain—Bandwidth Product | IE= -0.5A ; VCE= 12V |
| 20 |
| MHz |
Switching Times | ||||||
ton | Turn-on Time | IC= 5A ,RL= 12Ω, IB1= -IB2= 0.5A,VCC=60V |
| 0.24 |
| μs |
tstg | Storage Time |
| 4.32 |
| μs | |
tf | Fall Time |
| 0.4 |
| μs | |
u
O | P | Y |
50-100 | 70-140 | 90-180 |
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