SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

1500

V

V_CEO

Collector-Emitter Voltage

800

V

V_EBO

Emitter-Base Voltage

7.5

V

I_C

Collector Current-Continuous

10

A

I_CM

Collector Current-peak

25

A

I_B

Base Current-Continuous

6

A

I_BM

Base Current-peak

9

A

P_C

Collector Power Dissipation

@T_C=25℃

125

W

T_j

Junction Temperature

150

℃

T_stg

StorageTemperature Range

-65~150

℃

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance, Junction to Case

1.0

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= 100mA; I_B= 0, L= 25mH

800

V

V_(BR)EBO

Emitter-Base Breakdown Voltage

I_E= 600mA; I_C= 0

7.5

13.5

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 6A; I_B= 1.2A

5.0

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 6A; I_B= 1.2A

1.1

V

I_CES

Collector Cutoff Current

V_CE= BV_CES;V_BE= 0

V_CE= BV_CES;V_BE= 0;T_C=125℃

1.0

2.0

mA

I_EBO

Emitter Cutoff Current

V_EB= 7.5V; I_C= 0

100

300

mA

h_FE-1

DC Current Gain

I_C= 1A; V_CE= 5V

13

h_FE-2

DC Current Gain

I_C= 6A; V_CE= 5V

5

7

9.5

V_ECF

C-E Diode Forward Voltage

I_F= 6A

2.2

V

C_OB

Output Capacitance

I_E= 0 ; V_CB= 10V; f_test= 1MHz

115

pF

Switching times (16kHz line deflection circuit)

t_stg

Storage Time

I_C= 6A, I_B(end)= 1.0A; L_B= 5.3μH;

L_C= 650μH; C_fb= 19nF;

-V_BB= 4V; (-dI_B/dt= 0.8A/μs)

5.5

μs

t_f

Fall Time

0.5

μs