The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a
integrated photodetector.
This unit is 8−lead DIP package.
TLP250 is suitable for gate driving circuit of IGBT or power MOS FET.
• Input threshold current: IF=5mA(max.)
• Supply current (ICC): 11mA(max.)
• Supply voltage (VCC): 10−35V
• Output current (IO): ±1.5A (max.)
• Switching time (tpLH/tpHL): 1.5µs(max.)
• Isolation voltage: 2500Vrms(min.)
• UL recognized: UL1577, file No.E67349
• Option (D4) type
VDE approved: DIN VDE0884/06.92,certificate No.76823
Maximum operating insulation voltage: 630VPK
Highest permissible over voltage: 4000VPK
(Note) When a VDE0884 approved type is needed,
please designate the "option (D4)"
• Creepage distance: 6.4mm(min.)
Clearance: 6.4mm(min.)

新手教學

批發市場僅提供代購諮詢服務，商品內容為廠商自行維護，若有發現不實、不合適或不正確內容，再請告知我們，查實即會請廠商修改或立即下架，謝謝。