供應光電耦合器原裝夏普PC817B/C_光電器件_電子元器件_貨源

■Absolute Maximum Ratings(Ta=25°

Parameter		Symbol	Rating		Unit
Input	Forward current	IF	50		mA
	*1 Peak forward current	IFM	1		A
	Reverse voltage	VR	6		V
	Power dissipation	P	70		mW
Output	Collector-emitter voltage	VCEO	*4	80	V
	Emitter-collector voltage	VECO		6	V
	Collector current	IC		50	mA
	Collector power dissipation	PC		150	mW
Total power dissipation		Ptot		200	mW
*2 Isolation voltage		Viso (rms)		5.0	kV
Operating temperature		Topr	−30 to +100		°C
Storage temperature		Tstg	−55 to +125		°C
*3 Soldering temperature		Tsol	260		°C

*1 Pulse width≤100μs, Duty ratio : 0.001

*2 40 to 60%RH, AC for 1minute, f=60Hz

*3 For 10s

*4 Up to Date code "P7" (July 2002) VCEO : 35V.

■Electro-optical Characteristics

Parameter			Symbol	Conditions	MIN.		TYP.	MAX.	Unit
Input	Forward voltage		VF	IF=20mA	−		1.2	1.4	V
	Peak forward voltage		VFM	IFM=0.5A	−		−	3.0	V
	Reverse current		IR	VR=4V	−		−	10	µA
	Terminal capacitance		Ct	V=0, f=1kHz	−		30	250	pF
Output	Collector dark current		ICEO	VCE=50V, IF=0	−		−	100	nA
	Collector-emitter breakdown voltage		BVCEO	IC=0.1mA, IF=0	*5	80	−	−	V
	Emitter-collector breakdown voltage		BVECO	IE=10µA, IF=0		6	−	−	V
Transfer characteristics	Collector current		IC	IF=5mA, VCE=5V		2.5	−	30.0	mA
	Collector-emitter saturation voltage		VCE (sat)	IF=20mA, IC=1mA		−	0.1	0.2	V
	Isolation resistance		RISO	DC500V, 40 to 60%RH	5×1010		1×1011	−	?
	Floating capacitance		Cf	V=0, f=1MHz	−		0.6	1.0	pF
	Cut-off frequency		fc	VCE=5V, IC=2mA, RL=100?, −3dB	−		80	−	kHz
	Response time	Rise time	tr	VCE=2V, IC=2mA, RL=100?	−		4	18	µs
	Response time	Fall time	tf	VCE=2V, IC=2mA, RL=100?	−		3	18	µs

*5 From the production Date code "J5" (May 1997) to "P7" (July 2002), however the products were screened by BVCEO≥70V.

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