Grade

(等級)

Dummy (假片) & Test (測試片)

Growth Method

(生長方法)

CZ (直拉法)，FZ (區熔法)

Diameter

(直徑)

2”, 3”, 4”, 5”, 6”, 8”, 12”

CrystalOrientation

(晶向)

<100>, <111>, <110>

Conductivity Type

(導電類型)

P-Type or N-Type

(P型或N型)

Dopant

(摻雜劑)

P (Boron-硼)

N (Phosphorus-磷, Antimony-銻or Arsenic-砷)

Resistivity

(電阻率)

0.001 ~ 30,000 ?.cm

Oxygen Content

(氧含量)

                      16   3

< 3.0 x 10 cm

Carbon Content

(碳含量)

                      16   3

< 3.0 x 10 cm

Wafer Thickness

(厚度)

According to SEMI standard or customer requirements

(按SEMI標準或客戶要求)

Surface Finish

(表面處理方式)

As-cut, lapped, etched or polished

(切片，研磨，蝕刻或拋光)

Bow & Warp

(彎曲度和翹曲度)

< 30 μm

Note:

The table summarizes the general product specifications, more specific requirements can be further discussed

(表中概括瞭常規產品參數，對產品有更特殊的要求可來電咨詢).