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FEATURE
Power dissipation
PCM: 0.625 W (Tamb=25℃)
Collector current ICM: 0.5 A Collector-base voltage
V(BR)CBO: 40 V Operating and storage junction temperature range Tj
, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 5 V
Collector cut-off current ICBO VCB= 40V, IE=0 0.1 μA Collector cut-off current ICEO VCE=20V, IE=0 0.1 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA hFE(1) VCE=1V, IC=50mA 64 400 DC current gain hFE(2) VCE=1V, IC= 500mA 40 Collector-emitter saturation voltage VCE(sat) IC= 500 mA, IB= 50mA 0.6 V base-emitter voltage VBE(sat) IC= 500 mA, IB= 50mA 1.2 V Transition frequency f T
VCE=6V, IC=20mA, f=30MHz
150 MHz CLASSIFICATION OF hFE(1)
Rank D E F G H I J Range 64-91 78-112 96-135 112-166 144-202 190-300 300-400
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